isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2.5A@ TC=25℃ · Drain Source Voltage -VDSS= 350V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.95 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-CHANNEL MOSFET in a TO-220F Plastic Package

文件：1.06469 Mbytes 頁數(shù)：6 Pages

FOSHAN

藍(lán)箭電子

isc N-Channel MOSFET Transistor

文件：270.49 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

MOSFET/場效應(yīng)管

BlueRocket

藍(lán)箭電子

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 400V ■ Lower RDS(ON) : 0.765 Ω(Typ.)

文件：266.83 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：898.57 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：3.10167 Mbytes 頁數(shù)：9 Pages

KERSEMI

isc N-Channel MOSFET Transistor

文件：264.84 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Advanced Power MOSFET

ONSEMI

安森美半導(dǎo)體