200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

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FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10.2A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.86 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-CHANNEL MOSFET in a TO-220F Plastic Package

文件：814.08 Kbytes 頁數(shù)：6 Pages

FOSHAN

藍箭電子

N-Channel MOSFET uses advanced trench technology

文件：1.13919 Mbytes 頁數(shù)：5 Pages

DOINGTER

杜因特

Improved inductive ruggedness

文件：308.86 Kbytes 頁數(shù)：5 Pages

SAMSUNG

三星

SEMICONDUCTORS

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ETCList of Unclassifed Manufacturers

未分類制造商

isc N-Channel MOSFET Transistor

文件：270.97 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Improved inductive ruggedness

Samsung

三星

中低壓MOS≤200V

BlueRocket

藍箭電子

Rugged Gate Oxide Technology

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS= 200V Lower RDS(ON) : 0.144 (Typ. )

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FAIRCHILD

仙童半導體