| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFPG50 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude 文件：1.0239 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFPG50 | Power MOSFET(Vdss=1000V, Rds(on)=2.0ohm, Id=6.1A) Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Isolated Central Mounting Hole ? Fast S 文件：211.36 Kbytes 頁數(shù)：8 Pages | IRF | IRF | |
IRFPG50 | Power MOSFET 文件：1.09689 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFPG50 | Power MOSFET 文件：397.26 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude 文件：1.0239 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Isolated Central Mounting Hole ? Fast S 文件：242.52 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET 文件：1.09689 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：397.26 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：397.26 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
IRFPG50 | Power MOSFET(Vdss=1000V, Rds(on)=2.0ohm, Id=6.1A) | Infineon 英飛凌 | Infineon |
技術參數(shù)
- 漏源電壓（Vdss）：
1000V
- 柵源極閾值電壓（最大值）：
4V @ 250uA
- 漏源導通電阻（最大值）：
2 Ω @ 3.6A，10V
- 類型：
N 溝道
- 功率耗散（最大值）：
190W
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
TO-247 |
20300 |
VISHAY/威世原裝特價IRFPG50即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
1151G/QX |
TO-247 |
5 |
只做原裝,現(xiàn)貨庫存 |
詢價 | ||
IR |
24+ |
TO-247AC |
8866 |
詢價 | |||
IR |
2015+ |
SOP/DIP |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
06+ |
TO-247 |
3300 |
自己公司全新庫存絕對有貨 |
詢價 | ||
IR |
17+ |
TO-3P |
6200 |
詢價 | |||
IR |
1215+ |
TO-247 |
150000 |
全新原裝,絕對正品,公司大量現(xiàn)貨供應. |
詢價 | ||
IR |
24+ |
原廠封裝 |
726 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
16+ |
TO-3P |
10000 |
全新原裝現(xiàn)貨 |
詢價 |
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