N-Channel Enhancement Mode MegaMOS FET

MegaMOS?FET N-Channel Enhancement Mode Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● High commutating dv/dt rating ● Fast switching times Applications ● Switch-mode and resonant-mode power supplies ● Motor controls ●

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IXYS

艾賽斯

isc N-Channel MOSFET Transistor

文件：378.16 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE

LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE ·Conserves battery life ·Unique manufacturing process ·Provides lowest reverse leakage currents ·Low impedance atcurrents specified at 10 mA and below

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KNOX

Coils and Chokes for general use

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PREMO

普萊默

SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR 400MHz~520MHz RANGE)

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KEC

KEC(Korea Electronics)