$GYDQFHG 3RZHU 026)(7

FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS = 250V ? Low RDS(ON): 0.108? (Typ.)

文件：247.49 Kbytes 頁數(shù)：7 Pages

IRF

isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Drain Current –ID= 25A@ TC=25℃ ? Drain Source Voltage- : VDSS= 250V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) ? Fast Switching

文件：67.81 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

$GYDQFHG 3RZHU 026)(7

Infineon

英飛凌

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：670.77 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：222.26 Kbytes 頁數(shù)：8 Pages

IRF

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that these Power MOSFETs are well known for, provides the design

文件：159.45 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司