| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFP044 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t 文件：1.996 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFP044 | Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A) Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels 文件：170.96 Kbytes 頁數(shù)：6 Pages | IRF | IRF | |
IRFP044 | Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A) | Infineon 英飛凌 | Infineon | |
N-Channel MOSFET Transistor ? DESCRITION ? Ultra Low On-resistance ? Fast Switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤20m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：335.02 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：105.25 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：1.54744 Mbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t 文件：1.996 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A) Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels 文件：170.96 Kbytes 頁數(shù)：6 Pages | IRF | IRF | ||
ADVANCED PROCESS TECHNOLOGY 文件：1.54744 Mbytes 頁數(shù)：9 Pages | IRF | IRF | ||
ADVANCED PROCESS TECHNOLOGY 文件：1.54744 Mbytes 頁數(shù)：9 Pages | IRF | IRF |
技術參數(shù)
- Package?：
TO-247
- VDS?max：
55.0V
- RDS (on)?max：
20.0m?
- RDS (on)(@10V)?max：
20.0m?
- Polarity?：
N
- ID ?max：
35.0A
- ID (@ TC=100°C)?max：
35.0A
- ID (@ TC=25°C)?max：
49.0A
- Ptot?max：
100.0W
- QG?：
40.7nC?
- Mounting?：
THT
- Tj?max：
175.0°C
- Qgd?：
16.0nC?
- VGS?max：
20.0V
- RthJC?max：
1.5K/W
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2021+ |
TO-247 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
IR |
24+ |
TO 3P |
161468 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
24+ |
N/A |
8000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
2025+ |
TO-247 |
3500 |
原裝進口價格優(yōu) 請找坤融電子! |
詢價 | ||
IR |
25+ |
TO-3P |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
24+ |
1100 |
詢價 | |||||
IR |
06+ |
TO-247 |
800 |
全新原裝 絕對有貨 |
詢價 | ||
IR |
24+ |
原廠封裝 |
1000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
2016+ |
TO-247 |
6000 |
公司只做原裝,假一罰十,可開17%增值稅發(fā)票! |
詢價 |
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