Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.289 Ω(Typ.)

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FAIRCHILD

仙童半導(dǎo)體

Advanced Power MOSFET

ONSEMI

安森美半導(dǎo)體

QUAD N-CHANNEL ENHANCEMENT MOSFETS

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SEME-LAB

4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs

4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use

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INTERSIL

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power

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VISHAYVishay Siliconix

威世威世科技公司