Power MOSFET

文件：174.72 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A)

Description Third Generation HESFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Surface Mount (IRFR9014) ? Straight L

文件：177.68 Kbytes 頁數(shù)：6 Pages

IRF

HEXFET Power MOSFET

Description Third Generation HESFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Surface Mount (IRFR9014) ? Straight L

文件：188.89 Kbytes 頁數(shù)：6 Pages

IRF

P-CHANNEL POWER MOSFETS

FEATURES ? Lower RDS(ON) ? Improved inductive ruggedness ? Fast switching times ? Rugged polysilicon gate cell structure ? Lower input capacitance ? Extended safe operating area ? Improved high temperature reliability

文件：306.39 Kbytes 頁數(shù)：5 Pages

SAMSUNG

三星