IRFF430中文資料INTERSIL數(shù)據(jù)手冊PDF規(guī)格書
IRFF430規(guī)格書詳情
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
特性 Features
? 2.75A, 500V
? rDS(ON) = 1.500?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產品屬性
- 型號：
IRFF430
- 制造商：
International Rectifier
- 功能描述：
Trans MOSFET N-CH 500V 2.5A 3-Pin TO-39
- 功能描述：
TRANS MOSFET N-CH 500V 2.5A 3PIN TO-39 - Bulk
- 功能描述：
Single N-Channel 500 V 25 W 29.5 nC Hexfet Transistor Through Hole - TO-39
- 功能描述：
N CH MOSFET, 500V, 2.5A, TO-205AF; Transistor
- Polarity：
N Channel; Continuous Drain Current
- Id：
2.5A; Drain Source Voltage
- Vds：
500V; On Resistance
- Rds(on)：
1.5ohm; Rds(on) Test Voltage
- Vgs：
10V; Threshold Voltage Vgs
- Typ：
4V ;RoHS
- Compliant：
No
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
24+ |
CAN |
1000 |
詢價 | |||
TI |
23+ |
VQFN18 |
3200 |
正規(guī)渠道,只有原裝! |
詢價 | ||
IR |
22+ |
CAN |
11190 |
原裝正品 |
詢價 | ||
TI |
23+ |
VQFN18 |
5000 |
全新原裝,支持實單,非誠勿擾 |
詢價 | ||
TI |
23+ |
VQFN18 |
3200 |
公司只做原裝，可來電咨詢 |
詢價 | ||
IR |
23+ |
CAN |
7000 |
詢價 | |||
TI |
22+ |
VQFN18 |
20000 |
公司只做原裝 品質保障 |
詢價 | ||
INTERNATIONALRECTIFIER |
2447 |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
IR(國際整流器) |
25+ |
封裝 |
500000 |
源自原廠成本,高價回收工廠呆滯 |
詢價 | ||
ALEGRO |
AUCDIP |
3647 |
萊克訊每片來自原廠!價格超越代理!只做進口原裝! |
詢價 |
