| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFD024 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat 文件：1.13847 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD024 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? For Automatic insertion ? End stackable ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third ge 文件：421.42 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD024 | Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A)
文件：172.17 Kbytes 頁數(shù)：6 Pages | IRF | IRF | |
IRFD024 | Power MOSFET 文件：1.27397 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFD024 | Power MOSFET ? Dynamic dV/dt rating\n? For Automatic insertion\n? End stackable; | Vishay 威世 | Vishay | |
IRFD024 | HEXFET? Power MOSFET | Infineon 英飛凌 | Infineon | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? For Automatic insertion ? End stackable ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third ge 文件：421.42 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat 文件：1.13847 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET
文件：651.6 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET 文件：1.27397 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- 漏源電壓（Vdss）：
60V
- 柵源極閾值電壓（最大值）：
4V @ 250uA
- 漏源導通電阻（最大值）：
100 mΩ @ 1.5A，10V
- 類型：
N 溝道
- 功率耗散（最大值）：
1.3W
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+/25+ |
60 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||||
IR |
05+ |
原廠原裝 |
4638 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
24+ |
DIP |
66 |
詢價 | ||||
ir |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
IR |
24+ |
DIP-4 |
9598 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ON |
23+ |
NA |
6500 |
全新原裝假一賠十 |
詢價 | ||
IR |
23+ |
HD-1 |
9888 |
專做原裝正品,假一罰百! |
詢價 | ||
IR |
25+ |
DIP-4 |
9500 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
IR |
23+ |
65480 |
詢價 | ||||
VISHAY |
25+ |
DIP-4 |
1675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 |
相關(guān)規(guī)格書
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
相關(guān)庫存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
