| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFBE20 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio 文件：1.00024 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFBE20 | Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A) Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi 文件：171.1 Kbytes 頁數(shù)：6 Pages | IRF | IRF | |
IRFBE20 | Power MOSFET 文件：266.13 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio 文件：1.00024 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi 文件：249.82 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 1.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·motor drive, DC-DC 文件：332.88 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Power MOSFET 文件：266.13 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：266.13 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：266.13 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
IRFBE20 | Power MOSFET ? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? Fast switching; | Vishay 威世 | Vishay |
技術(shù)參數(shù)
- 漏源電壓（Vdss）：
800V
- 柵源極閾值電壓（最大值）：
4V @ 250uA
- 漏源導通電阻（最大值）：
6.5 Ω @ 1.1A，10V
- 類型：
N 溝道
- 功率耗散（最大值）：
54W
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
2450+ |
TO-220 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價 | ||
IR |
06+ |
TO-220 |
6000 |
自己公司全新庫存絕對有貨 |
詢價 | ||
IR |
2015+ |
TO-220 |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
24+ |
TO-220 |
98 |
詢價 | |||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫存長期供應 |
詢價 | ||
VISHAY/IR |
24+ |
原廠封裝 |
5950 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
23+ |
原廠封裝 |
9888 |
專做原裝正品,假一罰百! |
詢價 | ||
IR |
23+ |
TO220 |
65480 |
詢價 | |||
IR |
25+ |
TO-220 |
30000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 |
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