| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFB3207 | HEXFET Power MOSFET Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Worldwide Best RDS(on) in TO-220 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance a 文件:385 Kbytes 頁數(shù):11 Pages | IRF | IRF | |
IRFB3207 | N-Channel MOSFET Transistor 文件:338.79 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
IRFB3207 | High Efficiency Synchronous Rectification in SMPS 文件:1.44902 Mbytes 頁數(shù):11 Pages | KERSEMI | KERSEMI | |
IRFB3207 | 75V 單個 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封裝 \n優(yōu)勢:\n? 符合 RoHS\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 快速開關(guān)\n? 175°C 的工作溫度\n?; | Infineon 英飛凌 | Infineon | |
HEXFET?Power MOSFET Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA 文件:383.2 Kbytes 頁數(shù):12 Pages | IRF | IRF | ||
N-Channel MOSFET Transistor ? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤4.1m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operati 文件:338.69 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
N-Channel MOSFET Transistor ? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤4.1m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operati 文件:338.68 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
HEXFETPower MOSFET Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching ● Hard Switched and High Frequency Circuits Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● En 文件:291.9 Kbytes 頁數(shù):8 Pages | IRF | IRF | ||
HEXFET Power MOSFET Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA 文件:829.1 Kbytes 頁數(shù):11 Pages | IRF | IRF | ||
High Efficiency Synchronous Rectification in SMPS 文件:384.16 Kbytes 頁數(shù):12 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN:
IRFB3207PBF
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
75 V
- RDS (on) @10V max:
4.5 m?
- ID @25°C max:
170 A
- QG typ @10V:
180 nC
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- VGS(th):
3 V
- Technology:
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
17+ |
NA |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
24+ |
TO-220AB |
8866 |
詢價 | |||
IR |
24+ |
原廠封裝 |
101 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | ||
IR |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
25+ |
TO220 |
2650 |
原裝優(yōu)勢!絕對公司現(xiàn)貨 |
詢價 | ||
IR |
24+ |
SMD |
12000 |
原廠/代理渠道價格優(yōu)勢 |
詢價 | ||
IR |
23+ |
TO-220 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IR |
25+ |
to-220 |
5800 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 |
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