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    首頁 >IRF850>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    IRF850

    Power Field Effect Transistor

    TMOS POWER FET 4.5 AMPERES 500 VOLTS RDS(on)= 1.5 ? This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ?Silicon Gate for Fast Switching Speeds ?Low RDS(on)to Minimize On–Loss

    文件:119.43 Kbytes 頁數(shù):3 Pages

    ONSEMI

    安森美半導(dǎo)體

    IRF850

    PowerMOS transistor Avalanche energy rated

    GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. FEATURES ? Repe

    文件:58.83 Kbytes 頁數(shù):7 Pages

    PHI

    PHI

    PHI

    IRF850

    4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

    This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

    文件:56.15 Kbytes 頁數(shù):7 Pages

    INTERSIL

    IRF850

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET

    Description APEC MOSFET provide the power designer with the best combination of fastswitching , lower on-resistance and reasonable cost. The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC conv

    文件:95.81 Kbytes 頁數(shù):4 Pages

    A-POWER

    富鼎先進(jìn)電子

    IRF850

    N-channel mosfet transistor

    Features ? With TO-220 package ? Simple drive requirements ? Fast switching ? VDSS=500V; RDS(ON)≤1.5Ω ;ID=4.5A ? 1.gate 2.drain 3.source

    文件:128.55 Kbytes 頁數(shù):1 Pages

    ISC

    無錫固電

    IRF850

    N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

    Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VGS Rated at ± 20V ? Silicon Gate for Fast Switchi

    文件:122.44 Kbytes 頁數(shù):3 Pages

    NJSEMINew Jersey Semi-Conductor Products, Inc.

    新澤西半導(dǎo)體新澤西半導(dǎo)體公司

    IRF850

    N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS

    APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWICHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT

    文件:169.46 Kbytes 頁數(shù):6 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
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    IR
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    IR
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    IR
    2022+
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    3000
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    26+
    TSSOP16
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    23+
    SOP-8
    89630
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    IR
    23+
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    7000
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    IR
    17+
    SOP8
    6200
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    IR
    24+
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    5000
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    IR
    24+
    SOIC-8
    25000
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    更多IRF850供應(yīng)商 更新時(shí)間2026-1-22 14:02:00

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