500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：911.1 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

文件：150.37 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

PowerMOS transistor Avalanche energy rated

DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF840 is supplied in

文件：60.22 Kbytes 頁數(shù)：7 Pages

PHI

PHI

N-CHANNEL POWER MOSFETS

FEATURES ? Lower RDS(ON) ? Improved inductive ruggedness ? Fast switching times ? Rugged polysilicon gate cell structure ? Lower input capacitance ? Extended safe operation area ? Improved high temperature reliability

文件：272.29 Kbytes 頁數(shù)：5 Pages

SAMSUNG

三星

8A, 500V, 0.850 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switchin

文件：56.91 Kbytes 頁數(shù)：7 Pages

INTERSIL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：135.24 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datasheet provides information about parts that are? R

文件：248.37 Kbytes 頁數(shù)：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

文件：146.97 Kbytes 頁數(shù)：2 Pages

MOTOROLA

摩托羅拉

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. APEC MOSFET provide the power designer with the best combination of fast s

文件：96.38 Kbytes 頁數(shù)：4 Pages

A-POWER

富鼎先進(jìn)電子

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

FEATURE N channel in a plastic TO220 package. They are intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies. DC-DC converters, motor control circuits and general purpose switching applications Compliance to RoHS.

文件：108.92 Kbytes 頁數(shù)：3 Pages

COMSET