絲印：F8113；Package：SO-8；Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Low Gate Charge ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Synchronous MOSFET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems

文件：207.34 Kbytes 頁數(shù)：10 Pages

IRF

絲?。?a target="_blank" title="Marking" href="/f8113/marking.html">F8113；Package：SO-8；Synchronous MOSFET for Notebook Processor Power

文件：272.21 Kbytes 頁數(shù)：10 Pages

IRF

絲印：F8113；Package：SO-8；IRU3146 EVALUATION BOARD USER GUIDE

文件：1.7854 Mbytes 頁數(shù)：15 Pages

IRF

絲印：IRF8113；Package：SOP-8；30V N-Channel MOSFET

Applications
Synchronous MOSFET for Notebook Processor Power
Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems

文件：416.61 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導體

30V 單個 N 通道 HEXFET Power MOSFET, 采用 SO-8 封裝

\n優(yōu)勢:\n? 符合 RoHS\n? 具有業(yè)內(nèi)先進的品質(zhì)\n? 低RDS(ON) @ 4.5V VGS\n? 經(jīng)過充分驗證的雪崩電壓和電流\n? 超低的柵極阻抗;

Infineon

英飛凌

DirectFET

Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Low Gate Charge ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Synchronous MOSFET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems

文件：291.84 Kbytes 頁數(shù)：10 Pages

IRF

HEXFET?Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Low Gate Charge ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG ● Lead-Free Applications ● Synchronous MOSFET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Netwo

文件：218.98 Kbytes 頁數(shù)：10 Pages

IRF

Synchronous MOSFET for Notebook Processor Power

文件：224.52 Kbytes 頁數(shù)：10 Pages

IRF

Synchronous MOSFET for Notebook Processor Power

文件：224.52 Kbytes 頁數(shù)：10 Pages

IRF

Industry-standard pinout SO-8 Package

文件：255.41 Kbytes 頁數(shù)：10 Pages

IRF