N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

文件：114.2 Kbytes 頁數(shù)：8 Pages

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

文件：593.59 Kbytes 頁數(shù)：8 Pages

IRF

絲?。?a target="_blank" title="Marking" href="/irf7809/marking.html">IRF7809；Package：SOP-8；30V N-Channel MOSFET

Description The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809AV offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The pac

文件：883.1 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導(dǎo)體

N-Channel Application-Specific MOSFETs

文件：599.01 Kbytes 頁數(shù)：8 Pages

IRF

N-Channel Application-Specific MOSFETs

文件：599.01 Kbytes 頁數(shù)：8 Pages

IRF

Industry-standard pinout SO-8 Package

文件：206.2 Kbytes 頁數(shù)：8 Pages

IRF

Industry-standard pinout SO-8 Package

文件：206.2 Kbytes 頁數(shù)：8 Pages

IRF

N-Channel Application-Specific MOSFETs

文件：599.01 Kbytes 頁數(shù)：8 Pages

IRF

采用 SO-8 封裝的 IR MOSFET 30 V

\n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度;

Infineon

英飛凌

30V 單個 N 通道 HEXFET Power MOSFET, 采用 SO-8 封裝

\n優(yōu)勢:\n? 工業(yè)標(biāo)準(zhǔn)引出線 SO-8 封裝\n? 與現(xiàn)有表面封裝技術(shù)兼容\n? 符合 RoHS ， 無鹵素\n? 符合MSL1，工業(yè)認(rèn)證;

Infineon

英飛凌