| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Control FET for Notebool Processor Power, Control and Synchronous Rectifier Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG ● Lead-Free Applications ● Control FET for Notebook Processor Power ● Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computi 文件：266.83 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：219.63 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：116.36 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
絲印：IRF7416；Package：SOP-8；P-Channel 30 V (D-S) MOSFET Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching FEATURES 文件：435.63 Kbytes 頁數(shù)：8 Pages | UMW 友臺半導(dǎo)體 | UMW | ||
P-Channel 30 V (D-S) MOSFET FEATURES Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching 文件：336.68 Kbytes 頁數(shù)：8 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：201.72 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
絲?。?a target="_blank" title="Marking" href="/irf7416/marking.html">IRF7416；Package：SOP-8；P-Channel 30 V (D-S) MOSFET FEATURES Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching 文件：336.68 Kbytes 頁數(shù)：8 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲印：IRF7416；Package：SOP-8；P-Channel 30 V (D-S) MOSFET Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching FEATURES 文件：435.63 Kbytes 頁數(shù)：8 Pages | UMW 友臺半導(dǎo)體 | UMW | ||
Ultra Low On-Resistance 文件：214.53 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Ultra Low On-Resistance 文件：214.53 Kbytes 頁數(shù)：9 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF7410TRPBF
- Qualification：
Non-Automotive
- Package name：
SO8
- VDS max：
-12 V
- RDS (on) @4.5V max：
7 m?
- ID @25°C max：
-16 A
- QG typ @4.5V：
91 nC
- Polarity：
P
- VGS(th) min：
-0.4 V
- VGS(th) max：
-0.9 V
- VGS(th)：
-0.65 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MOT |
23+ |
SSOP |
5000 |
原裝正品,假一罰十 |
詢價 | ||
SILICONIX |
23+ |
65480 |
詢價 | ||||
IR |
25+ |
TO220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Harris |
25+ |
23 |
公司優(yōu)勢庫存 熱賣中!! |
詢價 | |||
IR |
22+ |
TO-220 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
MOT |
23+ |
1176 |
67477 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
IR |
23+ |
TO-220 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-220 |
7000 |
詢價 | |||
24+ |
N/A |
54000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
IR |
23+ |
SOP-8 |
2500 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 |
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