| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF7406 | 絲?。?strong>IRF7406；Package：SOP-8；P-Channel 30 V (D-S) MOSFET Description The SOP-8 has been modified through a customized leadframe for enhanced therma characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board s 文件：417.3 Kbytes 頁(yè)數(shù)：8 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | |
IRF7406 | P-Channel 30 V (D-S) MOSFET Description The SOP-8 has been modified through a customized leadframe for enhanced therma characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board spa 文件：380.51 Kbytes 頁(yè)數(shù)：8 Pages | EVVOSEMI 翊歐 | EVVOSEMI | |
IRF7406 | HEXFET POWER MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：216.73 Kbytes 頁(yè)數(shù)：9 Pages | IRF | IRF | |
絲印：IRF7406；Package：SOP-8；P-Channel 30 V (D-S) MOSFET Description The SOP-8 has been modified through a customized leadframe for enhanced therma characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board s 文件：417.3 Kbytes 頁(yè)數(shù)：8 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
絲印：IRF7406；Package：SOP-8；P-Channel 30 V (D-S) MOSFET Description The SOP-8 has been modified through a customized leadframe for enhanced therma characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board spa 文件：380.51 Kbytes 頁(yè)數(shù)：8 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
IRF7406 | 采用 SO-8 封裝的 -30V 單 P 通道 HEXFET 功率 MOSFET \n優(yōu)勢(shì):\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動(dòng)態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n? P 通道MOSFET; | Infineon 英飛凌 | Infineon | |
HEXFET?Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：235.41 Kbytes 頁(yè)數(shù)：9 Pages | IRF | IRF | ||
Ultra Low On-Resistance 文件：268.39 Kbytes 頁(yè)數(shù)：9 Pages | IRF | IRF | ||
Generation V Technology 文件：215.79 Kbytes 頁(yè)數(shù)：8 Pages | IRF | IRF | ||
ULTAR LOW ON RESISTANCE 文件：240.98 Kbytes 頁(yè)數(shù)：9 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF7406TRPBF
- Qualification：
Non-Automotive
- Package name：
SO8
- VDS max：
-30 V
- RDS (on) @10V max：
45 m?
- RDS (on) @4.5V max：
70 m?
- ID @25°C max：
-5.8 A
- QG typ @10V：
39.3 nC
- Polarity：
P
- VGS(th) min：
-1 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
20+ |
SOP-8 |
200 |
原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
2025+ |
SOP |
5000 |
原裝進(jìn)口價(jià)格優(yōu) 請(qǐng)找坤融電子! |
詢價(jià) | ||
IR |
23+ |
SOP8 |
7100 |
絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購(gòu)! |
詢價(jià) | ||
24+ |
SOP-8 |
526 |
詢價(jià) | ||||
IR |
13+ |
SOP-8 |
22138 |
原裝分銷 |
詢價(jià) | ||
IR |
25+ |
SOP-8 |
2500 |
福安甌為您提供真芯庫(kù)存,真誠(chéng)服務(wù) |
詢價(jià) | ||
IOR |
05+ |
原廠原裝 |
13201 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IR |
2015+ |
SOP/DIP |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IRF |
25+ |
QFN |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) |
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