絲印：IRF7404；Package：SOP-8；P-Channel MOSFET

Features ? VDs (VE-55V ? Rps(ON)

文件：394.78 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導(dǎo)體

P-Channel MOSFET

Features VDs (V=-55V RDs(oN)

文件：376.09 Kbytes 頁數(shù)：8 Pages

EVVOSEMI

翊歐

Thermoelectric Cooler Controller

GENERAL DESCRIPTION The ADN8830 is a monolithic controller that drives a thermoelectric cooler (TEC) to stabilize the temperature of a laser diode or a passive component used in telecommunications equipment. This device relies on a negative temperature coefficient (NTC) thermistor to sense t

文件：416.88 Kbytes 頁數(shù)：24 Pages

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亞德諾

Thermoelectric Cooler Controller

GENERAL DESCRIPTION The ADN8830 is a monolithic controller that drives a thermoelectric cooler (TEC) to stabilize the temperature of a laser diode or a passive component used in telecommunications equipment. This device relies on a negative temperature coefficient (NTC) thermistor to sense t

文件：279.17 Kbytes 頁數(shù)：22 Pages

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亞德諾

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：163.23 Kbytes 頁數(shù)：8 Pages

IRF

絲?。?strong>IRF7404；Package：SOP-8；P-Channel MOSFET

Features ? VDs (VE-55V ? Rps(ON)

文件：394.78 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導(dǎo)體

絲印：IRF7404；Package：SOP-8；P-Channel MOSFET

Features VDs (V=-55V RDs(oN)

文件：376.09 Kbytes 頁數(shù)：8 Pages

EVVOSEMI

翊歐

采用 SO-8 封裝的 IR MOSFET -20 V

\n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n? P 通道 MOSFET;

Infineon

英飛凌

HEXFET Power MOSFET

文件：231.77 Kbytes 頁數(shù)：9 Pages

IRF

HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040廓 )

Description These HEXFET? Power MOSFETs in package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanch

文件：260.92 Kbytes 頁數(shù)：9 Pages

IRF