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          首頁(yè) >IRF631>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRF631

          N-Channel Power MOSFETs, 12 A, 150-200 V

          Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ●

          文件:106.61 Kbytes 頁(yè)數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          IRF631

          N-Channel Power MOSFETs, 12 A, 150-200 V

          Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ●

          文件:106.61 Kbytes 頁(yè)數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          IRF631

          N-Channel Power MOSFETs, 12A, 150-200 V

          Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V

          文件:177.14 Kbytes 頁(yè)數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF631

          isc N-Channel MOSFET Transistor

          文件:45.12 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          IRF631

          FIELD EFFECT POWER TRANSISTOR

          文件:854.87 Kbytes 頁(yè)數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          IRF631

          FIELD EFFECT POWER TRANSISTOR

          文件:910.79 Kbytes 頁(yè)數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          IRF631

          N-Channel Power Mosfets

          文件:155.57 Kbytes 頁(yè)數(shù):6 Pages

          ARTSCHIP

          IRF631

          Trans MOSFET N-CH 150V 9A

          NJS

          NJS

          技術(shù)參數(shù)

          • Minimum Operating Temperature:

            -55°C

          • Maximum Power Dissipation:

            75000mW

          • Maximum Operating Temperature:

            150°C

          • Maximum Gate Source Voltage:

            ±20V

          • Maximum Drain Source Voltage:

            150V

          • Maximum Continuous Drain Current:

            9A

          • Configuration:

            Single

          • Channel Type:

            N

          • Channel Mode:

            Enhancement

          • Category:

            Power MOSFET

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          INTERNATIONA
          06+
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          5490
          只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
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          8650
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          FAIRCHILD
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          50000
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          IR
          23+
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          50000
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          VB
          25+
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          10000
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          F
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          6000
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          更多IRF631供應(yīng)商 更新時(shí)間2026-1-21 16:07:00
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