Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)

Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

文件：125.07 Kbytes 頁數(shù)：10 Pages

IRF

Isc N-Channel MOSFET Transistor

? FEATURES ? With To-262 package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

文件：300.13 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Ultra Low On-Resistance

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

文件：1.0709 Mbytes 頁數(shù)：10 Pages

KERSEMI

HEXFET? Power MOSFET

文件：274.28 Kbytes 頁數(shù)：10 Pages

IRF

HEXFET? Power MOSFET

Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：284.02 Kbytes 頁數(shù)：11 Pages

IRF

Advanced Process Technology

文件：284.98 Kbytes 頁數(shù)：11 Pages

IRF

Advanced Process Technology

文件：284.98 Kbytes 頁數(shù)：11 Pages

IRF

100V 單個 N 通道 HEXFET Power MOSFET, 采用 TO-262 封裝

\n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度;

Infineon

英飛凌