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    首頁(yè) >IRF510>規(guī)格書列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    IRF510

    SEMICONDUCTORS

    文件:2.43533 Mbytes 頁(yè)數(shù):31 Pages

    ETCList of Unclassifed Manufacturers

    未分類制造商

    IRF510

    Repetitive Avalanche Rated

    文件:111.42 Kbytes 頁(yè)數(shù):2 Pages

    NJSEMINew Jersey Semi-Conductor Products, Inc.

    新澤西半導(dǎo)體新澤西半導(dǎo)體公司

    IRF510

    HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

    HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

    Infineon

    英飛凌

    IRF510

    N-Channel Power MOSFETs, 5.5 A, 60-100V

    ONSEMI

    安森美半導(dǎo)體

    IRF510_V01

    Power MOSFET

    FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor

    文件:158.35 Kbytes 頁(yè)數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    IRF510-513

    N-Channel Power MOSFETs, 5.5 A, 60-100V

    N-Channel Power MOSFETs, 5.5 A, 60-100V

    文件:151.65 Kbytes 頁(yè)數(shù):5 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    IRF510A

    Advanced Power MOSFET

    FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? 175°C Operating Temperature ? Lower Leakage Current : 10 μA (Max.) @ VDS= 100V ? Lower RDS(ON) : 0.289 ?(Typ.)

    文件:252.81 Kbytes 頁(yè)數(shù):7 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    IRF510N

    Advanced Power MOSFET

    FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? 175°C Operating Temperature ? Lower Leakage Current : 10 μA (Max.) @ VDS= 100V ? Lower RDS(ON) : 0.289 ?(Typ.)

    文件:252.81 Kbytes 頁(yè)數(shù):7 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    IRF510N

    5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

    5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs

    文件:70.43 Kbytes 頁(yè)數(shù):7 Pages

    INTERSIL

    IRF510N

    Power MOSFET

    DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

    文件:1.06464 Mbytes 頁(yè)數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    技術(shù)參數(shù)

    • Minimum Operating Temperature:

      -55°C

    • Maximum Power Dissipation:

      43000mW

    • Maximum Operating Temperature:

      175°C

    • Maximum Gate Source Voltage:

      ±20V

    • Maximum Drain Source Voltage:

      100V

    • Maximum Continuous Drain Current:

      5.6A

    • Configuration:

      Single

    • Channel Type:

      N

    • Channel Mode:

      Enhancement

    • Category:

      Power MOSFET

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    IR
    24+
    TO-220
    2000
    全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
    詢價(jià)
    SEC
    2021+
    TO-220AB
    9000
    原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
    詢價(jià)
    IR
    24+
    TO 220
    161277
    明嘉萊只做原裝正品現(xiàn)貨
    詢價(jià)
    IR
    2024+
    N/A
    70000
    柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
    詢價(jià)
    ONSEMI
    25+
    N/A
    11543
    正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
    詢價(jià)
    IR
    05+
    TO-220
    8000
    原裝進(jìn)口
    詢價(jià)
    IR
    24+
    TO-220
    6
    詢價(jià)
    IR
    24+
    TO-220
    10000
    原裝現(xiàn)貨假一罰十
    詢價(jià)
    IR
    15+
    TO-220
    11560
    全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
    詢價(jià)
    SEC
    17+
    TO-220AB
    6200
    100%原裝正品現(xiàn)貨
    詢價(jià)
    更多IRF510供應(yīng)商 更新時(shí)間2026-1-22 11:22:00

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