Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：108.57 Kbytes 頁(yè)數(shù)：8 Pages

IRF

-60V P-Channel MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. Features

文件：952.13 Kbytes 頁(yè)數(shù)：9 Pages

EVVOSEMI

翊歐

-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -74A (VGS = -10V) * RDS(ON)

文件：554.37 Kbytes 頁(yè)數(shù)：8 Pages

UMW

友臺(tái)半導(dǎo)體

MOSFET P 55V 74A 0.02 OHM

文件：695.2 Kbytes 頁(yè)數(shù)：8 Pages

SYC

Advanced Process Technology

文件：720.64 Kbytes 頁(yè)數(shù)：8 Pages

KERSEMI

P-Channel MOSFET Transistor

文件：335.22 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

isc N-Channel Mosfet Transistor

文件：65.75 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

絲印：IRF4905；Package：TO-220；-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -74A (VGS = -10V) * RDS(ON)

文件：554.37 Kbytes 頁(yè)數(shù)：8 Pages

UMW

友臺(tái)半導(dǎo)體

-55V 單個(gè) P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封裝

\n優(yōu)勢(shì):\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動(dòng)態(tài)的dv/dt額定值\n? 快速開(kāi)關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n? P 通道MOSFET;

Infineon

英飛凌

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：4.108 Mbytes 頁(yè)數(shù)：10 Pages

KERSEMI