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          首頁 >IRF450>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF450

          13A, 500V, 0.400 Ohm, N-Channel Power MOSFET

          This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

          文件:56.49 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF450

          N-CHANNEL POWER MOSFETS

          FEATURES ? Low Rds(on) ) at high voltage ? Improved Inductive ruggedness ? Excellent high voltage stability ? Fast switching times ? Rugged polysillcon gate cell structure ? Low Input capacitance ? Extended safe operating area ? Improved high temperature reliability ? TO-3 package (High v

          文件:214.37 Kbytes 頁數(shù):5 Pages

          SAMSUNG

          三星

          IRF450

          13A, 500V, 0.400 Ohm, N-Channel Power MOSFET

          This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

          文件:56.49 Kbytes 頁數(shù):7 Pages

          INTERSIL

          IRF450

          TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.400ohm, Id=12A)

          The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

          文件:144.63 Kbytes 頁數(shù):7 Pages

          IRF

          IRF450

          isc N-Channel MOSFET Transistor

          DESCRIPTION ? 13A,500V ? RDS(on)=0.4Ω ? SOA is Power Dissipation Limited ? Linear Transfer Characteristics ? Related Literature APPLICATIONS ? Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipola

          文件:48.8 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF450

          N-CHANNE POWER MOSFETS

          FEATURES ? Low Rds(on) ) at high voltage ? Improved Inductive ruggedness ? Excellent high voltage stability ? Fast switching times ? Rugged polysillcon gate cell structure ? Low Input capacitance ? Extended safe operating area ? Improved high temperature reliability ? TO-3 package (High v

          文件:136.22 Kbytes 頁數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          IRF450

          N-Channel Power MOSFET

          DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control, circuits UPS and general purpose switching applications. The Nell IRF450 is a three-terminal silicon device with current conduction capability of 14A, fast switching sp

          文件:434.5 Kbytes 頁數(shù):7 Pages

          NELLSEMI

          尼爾半導(dǎo)體

          IRF450

          N-CHANNEL POWER MOSFET

          文件:196.98 Kbytes 頁數(shù):3 Pages

          SEME-LAB

          IRF450

          N-CHANNEL POWER MOSFET

          文件:19.01 Kbytes 頁數(shù):2 Pages

          SEME-LAB

          IRF450

          HiRel MOSFETs

          \n優(yōu)勢:;

          Infineon

          英飛凌

          詳細(xì)參數(shù)

          • 型號:

            IRF450

          • 功能描述:

            MOSFET N-CH 500V 12A TO-3-3

          • RoHS:

          • 類別:

            分離式半導(dǎo)體產(chǎn)品 >> FET - 單

          • 系列:

            HEXFET®

          • 標(biāo)準(zhǔn)包裝:

            1,000

          • 系列:

            MESH OVERLAY™ FET

          • 型:

            MOSFET N 通道,金屬氧化物 FET

          • 特點(diǎn):

            邏輯電平門

          • 漏極至源極電壓(Vdss):

            200V 電流 - 連續(xù)漏極(Id) @ 25°

          • C:

            18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

          • C:

            180 毫歐 @ 9A,10V Id 時的

          • Vgs(th)(最大):

            4V @ 250µA 閘電荷(Qg) @

          • Vgs:

            72nC @ 10V 輸入電容(Ciss) @

          • Vds:

            1560pF @ 25V 功率 -

          • 最大:

            40W

          • 安裝類型:

            通孔

          • 封裝/外殼:

            TO-220-3 整包

          • 供應(yīng)商設(shè)備封裝:

            TO-220FP

          • 包裝:

            管件

          供應(yīng)商型號品牌批號封裝庫存備注價格
          ST
          24+
          TO-03
          1500
          AI芯片,車規(guī)MCU原裝現(xiàn)貨/為新能源汽車電子行業(yè)采購保駕護(hù)航
          詢價
          IR
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
          詢價
          IR
          24+
          TO-3
          9750
          鄭重承諾只做原裝進(jìn)口現(xiàn)貨
          詢價
          IR
          2025+
          TO-3
          5000
          原裝進(jìn)口價格優(yōu) 請找坤融電子!
          詢價
          IR
          1215+
          CAN2
          150000
          全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng).
          詢價
          IR
          25+
          QFN
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價
          IR
          2015+
          TO-3(鐵帽)
          19889
          一級代理原裝現(xiàn)貨,特價熱賣!
          詢價
          IR
          96+
          TO-3
          2500
          全新原裝絕對自己公司現(xiàn)貨特價!
          詢價
          IR
          24+
          原廠封裝
          5000
          原裝現(xiàn)貨假一罰十
          詢價
          IR
          23+
          TO-3
          5000
          原裝正品,假一罰十
          詢價
          更多IRF450供應(yīng)商 更新時間2026-1-21 17:35:00
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