N-CHANNEL POWER MOSFETS

FEATURES ? Low Boston) at high voltage ? Improved Inductive ruggedness ? Excellent high voltage stability ? Fast switching times ? Rugged polyslllcon gate cell structure ? Low Input capacitance ? Extended safe operating area ? Improved high temperature reliability ? TO-3 package (High vol

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SAMSUNG

三星

8A, 500V, 0.850 Ohm, N-Channel Power MOSFET

8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are

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INTERSIL

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Product Summary The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior rever

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IRF

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

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FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL POWER MOSFETS

FEATURES ? Low Boston) at high voltage ? Improved Inductive ruggedness ? Excellent high voltage stability ? Fast switching times ? Rugged polyslllcon gate cell structure ? Low Input capacitance ? Extended safe operating area ? Improved high temperature reliability ? TO-3 package (High vol

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ● VGS Rated at ±20V ● Silicon Gate for Fast Switching Spe

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ARTSCHIP

isc N-Channel MOSFET Transistor

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ISC

無(wú)錫固電

Repetitive Avalanche Ratings

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IRF

HiRel MOSFETs

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Infineon

英飛凌

8A, 500V, 0.850 Ohm, N-Channel Power MOSFET / TO-220AB Package

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching re

ONSEMI

安森美半導(dǎo)體