<strong id="5lvfi"><dl id="5lvfi"></dl></strong>

      • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
        <th id="5lvfi"><progress id="5lvfi"></progress></th>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
        1. <del id="5lvfi"></del>

          首頁 >IRF430>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF430

          N-Channel Power MOSFETs, 4.5 A, 450V/500V

          Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VGS Rated at ± 20V ? Silicon Gate for Fast Switchi

          文件:141.08 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF430

          N-CHANNEL POWER MOSFETS

          FEATURES ? Low RDs(on) at high voltage ? Improved inductive ruggedness ? Excellent high voltage stability ? Fast switching times ? Rugged polysilicon gate cell structure ? Low input capactiance ? Extended safe operating area ? Improved high temperature reliablitiy ? TO-3 package (High vol

          文件:211.24 Kbytes 頁數(shù):5 Pages

          SAMSUNG

          三星

          IRF430

          4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

          4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

          文件:56.66 Kbytes 頁數(shù):7 Pages

          INTERSIL

          IRF430

          TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

          The HEXFET? technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and di

          文件:146.28 Kbytes 頁數(shù):7 Pages

          IRF

          IRF430

          4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

          Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VGS Rated at ± 20V ? Silicon Gate for Fast Switchi

          文件:153.46 Kbytes 頁數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          IRF430

          N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

          Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VGS Rated at ± 20V ? Silicon Gate for Fast Switchi

          文件:122.44 Kbytes 頁數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          IRF430

          N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

          文件:122.44 Kbytes 頁數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          IRF430

          N-CHANNEL POWER MOSFET

          文件:21.34 Kbytes 頁數(shù):2 Pages

          SEME-LAB

          IRF430

          isc N-Channel MOSFET Transistor

          文件:48.56 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF430

          4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

          Renesas

          瑞薩

          技術(shù)參數(shù)

          • Minimum Operating Temperature:

            -55°C

          • Maximum Power Dissipation:

            75000mW

          • Maximum Operating Temperature:

            150°C

          • Maximum Gate Source Voltage:

            ±20V

          • Maximum Drain Source Voltage:

            500V

          • Maximum Continuous Drain Current:

            4.5A

          • Configuration:

            Single

          • Channel Type:

            N

          • Channel Mode:

            Enhancement

          • Category:

            Power MOSFET

          供應(yīng)商型號品牌批號封裝庫存備注價格
          HARRIS/哈里斯
          2025+
          TO-3
          3000
          原裝進(jìn)口價格優(yōu) 請找坤融電子!
          詢價
          IR
          24+
          TO-3
          10000
          詢價
          GE
          24+/25+
          20
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          IR
          2015+
          TO-3(鐵帽)
          19889
          一級代理原裝現(xiàn)貨,特價熱賣!
          詢價
          MOTOROLA
          05+
          原廠原裝
          4219
          只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
          詢價
          1
          全新原裝 貨期兩周
          詢價
          IR
          專業(yè)鐵帽
          TO-3
          67500
          鐵帽原裝主營-可開原型號增稅票
          詢價
          har
          25+
          500000
          行業(yè)低價,代理渠道
          詢價
          IR
          22+
          TO-3
          6000
          終端可免費(fèi)供樣,支持BOM配單
          詢價
          NO
          23+
          56143
          ##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
          詢價
          更多IRF430供應(yīng)商 更新時間2026-1-19 16:36:00
            <strong id="5lvfi"><dl id="5lvfi"></dl></strong>

              • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
                <th id="5lvfi"><progress id="5lvfi"></progress></th>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                1. <del id="5lvfi"></del>
                  国产最新视频 | 国产午夜一区 | 日韩无码超清 | 狠狠干777 | 中文字幕久久成人 |