| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF341 | N-Channel Power MOSFETs, 10A, 350V/400V
文件：154.43 Kbytes 頁數(shù)：5 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | |
IRF341 | N-CHANNEL POWER MOSFETS N-Channel Power MOSFETs 文件：211.69 Kbytes 頁數(shù)：5 Pages | SAMSUNG 三星 | SAMSUNG | |
IRF341 | isc N-Channel MOSFET Transistor 文件：47.83 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
IRF341 | N-Channel Power MOSFETs 文件：345.62 Kbytes 頁數(shù)：5 Pages | ARTSCHIP | ARTSCHIP | |
IRF341 | Trans MOSFET N-CH 350V 10A 3-Pin(2+Tab) TO-3 | NJS | NJS | |
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：94.53 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：156.56 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：167.38 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：199.83 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：156.56 Kbytes 頁數(shù)：10 Pages | IRF | IRF |
技術(shù)參數(shù)
- Maximum Power Dissipation：
125000mW
- Maximum Drain Source Voltage：
350V
- Maximum Continuous Drain Current：
10A
- Configuration：
Single
- Channel Type：
N
- Category：
Power MOSFET
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-3 |
10000 |
詢價 | |||
GE |
24+/25+ |
50 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
HARRIS |
05+ |
原廠原裝 |
7185 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
IR |
2015+ |
TO-3(鐵帽) |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
專業(yè)鐵帽 |
TO-3 |
67500 |
鐵帽原裝主營-可開原型號增稅票 |
詢價 | ||
IR |
22+ |
TO-3 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
TO-3 |
52462 |
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
HARRIS |
2023+ |
SMD |
2921 |
安羅世紀電子只做原裝正品貨 |
詢價 | ||
IR |
23+ |
TO-3 |
8000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-3 |
7000 |
詢價 |
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