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          首頁 >IRF252>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF252

          N-CHANNEL POWER MOSFETS

          FEATURES ? Low Rds(on) ? Improved Inductive ruggedness ? Excellent high voltage stability ? Fast switching times ? Rugged polysillcon gate cell structure ? Low Input capacitance ? Extended safe operating area ? Improved high temperature reliability ? TO-3 package (High voltage)

          文件:215.26 Kbytes 頁數(shù):5 Pages

          SAMSUNG

          三星

          IRF252

          High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

          FEATURES: ? Fast switching times ? Low RDS(on) HDMOS? process ? Rugged polysilicon gate cell structure ? Excellent high voltage stability ? Low input capacitance ? Improved high temperature reliability APPLICATIONS: ? Switching power supplies ? Motor controls ? Audio Amplifiers ? Invert

          文件:49.56 Kbytes 頁數(shù):1 Pages

          IXYS

          艾賽斯

          IRF252

          Nanosecond Switching Speed

          DESCRIPTION ? Drain Current ID=25A@ TC=25℃ ? Drain Source Voltage : VDSS= 200V(Min) ? Static Drain-Source On-Resistance : RDS(on) =0.12Ω(Max) ? Nanosecond Switching Speed APPLICATIONS ? Switching power supplies ? Switching converters,motor driver,relay driver

          文件:48.25 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF252

          N-CHANNE POWER MOSFETS

          FEATURES ? Low Rds(on) ) at high voltage ? Improved Inductive ruggedness ? Excellent high voltage stability ? Fast switching times ? Rugged polysillcon gate cell structure ? Low Input capacitance ? Extended safe operating area ? Improved high temperature reliability ? TO-3 package (High v

          文件:136.22 Kbytes 頁數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導體新澤西半導體公司

          IRF252

          N-CHANNEL POWER MOSFETS

          FEATURES ? Low Rds(on) ) at high voltage ? Improved Inductive ruggedness ? Excellent high voltage stability ? Fast switching times ? Rugged polysillcon gate cell structure ? Low Input capacitance ? Extended safe operating area ? Improved high temperature reliability ? TO-3 package (High v

          文件:137.76 Kbytes 頁數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導體新澤西半導體公司

          IRF252

          Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3

          NJS

          NJS

          IRF252

          Legacy Power Discretes & Modules

          Microchip

          微芯科技

          IRF252R

          Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3

          NJS

          NJS

          技術(shù)參數(shù)

          • Maximum Drain Source Voltage:

            200V

          • Maximum Continuous Drain Current:

            25A

          • Category:

            Power MOSFET

          供應(yīng)商型號品牌批號封裝庫存備注價格
          HAR
          06+
          原廠原裝
          4285
          只做全新原裝真實現(xiàn)貨供應(yīng)
          詢價
          IR
          24+
          TO-3
          10000
          詢價
          IR
          2015+
          TO-3(鐵帽)
          19889
          一級代理原裝現(xiàn)貨,特價熱賣!
          詢價
          IR
          23+
          TO-3
          9888
          專做原裝正品,假一罰百!
          詢價
          IR
          專業(yè)鐵帽
          TO-3
          500
          原裝鐵帽專營,代理渠道量大可訂貨
          詢價
          IR
          23+
          65480
          詢價
          IR
          專業(yè)鐵帽
          TO-3
          67500
          鐵帽原裝主營-可開原型號增稅票
          詢價
          IR
          26+
          SOP8L-PP
          86720
          全新原裝正品價格最實惠 假一賠百
          詢價
          IR
          1430+
          TO-3
          500
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價
          IR
          22+
          TO-3
          6000
          終端可免費供樣,支持BOM配單
          詢價
          更多IRF252供應(yīng)商 更新時間2026-1-20 16:11:00
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