Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=10A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Dynamic dv/dt Rating ? Repetitive Avalanche Rated ? Current Sense ? Fast Switching ? Ease

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IRF

Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=10A)

Infineon

英飛凌

MOSFET N-CH 400V 10A TO-220-5

Vishay

威世

N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. 1. HIGH CURRENT SWITCHING 2. UNINTERRUPTIBLE POWER SUPPLY (U

文件：93.41 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：894.8 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Power MOSFETs, 10A, 350V/400V

文件：154.43 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體