HALF-BRIDGE DRIVER

Description The IR2302(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTT

文件：205.29 Kbytes 頁數(shù)：22 Pages

IRF

HALF-BRIDGE DRIVER

文件：214.81 Kbytes 頁數(shù)：22 Pages

INFINEON

英飛凌

Gate drive supply range from 5 to 20V

文件：212.75 Kbytes 頁數(shù)：22 Pages

IRF

HALF-BRIDGE DRIVER

文件：212.75 Kbytes 頁數(shù)：22 Pages

IRF

600 V half-bridge gate driver IC with shutdown

600 V 半橋驅(qū)動器 IC,具有典型的 0.2 A 拉電流和 0.35 A 灌電流，采用 8 引腳 PDIP 封裝，適用于 IGBT 和 MOSFET。也有 8 引腳 SOIC 封裝可選。 ? 專為自舉操作設(shè)計的浮動通道\n? 完全運行時的電壓高達 600V\n? 容許負瞬態(tài)電壓高\n? 不受 dV/dt 影響\n? 柵極驅(qū)動供電電壓范圍：5 至 20V\n? 雙通道欠壓鎖定\n? 3.3V、5V 和 15V 輸入邏輯兼容\n? 防止交叉?zhèn)鲗?dǎo)邏輯\n? 雙通道的匹配傳播延遲\n? 高邊輸出與 IN 輸入同相\n? 邏輯和電源接地 +/- 5 V 偏移\n? 內(nèi)部死區(qū)時間為 540ns\n? 較低的 di/dt 柵極驅(qū)動器可獲得更好的抗噪聲性\n? 關(guān)斷輸入將關(guān)閉兩個通道\n? 也有無鉛(PbF)的 8 引腳 SOIC 封裝可選\n\n優(yōu)勢:;

Infineon

英飛凌

Package：8-DIP（0.300"，7.62mm）；包裝：卷帶（TR） 類別：集成電路（IC） 柵極驅(qū)動器 描述：IC GATE DRVR HALF-BRIDGE 8DIP

INFINEON

英飛凌

HALF-BRIDGE DRIVER

Description The IR2302(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTT

文件：205.29 Kbytes 頁數(shù)：22 Pages

IRF

HALF-BRIDGE DRIVER

Description The IR2302(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTT

文件：205.29 Kbytes 頁數(shù)：22 Pages

IRF

HALF-BRIDGE DRIVER

文件：212.75 Kbytes 頁數(shù)：22 Pages

IRF

HALF-BRIDGE DRIVER

文件：214.81 Kbytes 頁數(shù)：22 Pages

INFINEON

英飛凌