High and Low Side Driver

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

文件：1.20988 Mbytes 頁數(shù)：18 Pages

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

文件：439.23 Kbytes 頁數(shù)：15 Pages

IRF

High and Low Side Driver

文件：1.20988 Mbytes 頁數(shù)：18 Pages

IRF

High and Low Side Driver

文件：1.20988 Mbytes 頁數(shù)：18 Pages

IRF

1200 V high- and low-side gate driver IC bare die for IGBT and MOSFET

? Floating channel up to 1200 V\n? dV/dt immune\n? Undervoltage lockout for both channels\n? Logic supply range from 3.3 V to 20 V\n? Matched propagation delay for channels\n? Safely drive 110 Vac to 380 Vac apps\n? UVLO protection at low supply voltage\n \n\n\n;

Infineon

英飛凌

1200 V high-side and low-side gate driver IC with enable and shutdown

1200 V 高邊和低邊驅(qū)動器 IC,具有典型的 2 A 拉電流和 2.5 A 灌電流，采用 16 引腳 SOICWB 封裝，適用于 IGBT 和 MOSFET。也有 14 引腳 PDIP 封裝可選。 ? 專為自舉操作設(shè)計(jì)的浮動通道\n? 完全運(yùn)行時的電壓高達(dá) +1200 V\n? 容許負(fù)瞬態(tài)電壓高\(yùn)n? 不受 dV/dt 影響\n? 柵極驅(qū)動供電電壓范圍：12 至 20V\n? 雙通道欠壓鎖定\n? 3.3 V 邏輯兼容\n? 獨(dú)立的邏輯供電電壓范圍：3.3 V 至 20 V\n? 邏輯和電源接地 +/- 5 V 偏移\n? 具有下拉的 CMOS 施密特觸發(fā)輸入\n? 逐周期邊緣觸發(fā)關(guān)斷邏輯\n? 雙通道的匹配傳播延遲\n? 輸出與輸入同相\n\n優(yōu)勢:;

Infineon

英飛凌

Package：16-SOIC（0.295"，7.50mm 寬）；包裝：管件 類別：集成電路（IC） 柵極驅(qū)動器 描述：IC GATE DRVR HALF-BRIDGE 16SOIC

INFINEON

英飛凌

Package：16-SOIC（0.295"，7.50mm 寬）；包裝：管件 類別：集成電路（IC） 柵極驅(qū)動器 描述：IC GATE DRVR HALF-BRIDGE 16SOIC

INFINEON

英飛凌