| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS 文件：364.43 Kbytes 頁數(shù)：21 Pages | IRF | IRF | ||
HIGH AND LOW SIDE DRIVER Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT 文件：264.99 Kbytes 頁數(shù)：14 Pages | IRF | IRF | ||
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS 文件：364.43 Kbytes 頁數(shù)：21 Pages | IRF | IRF | ||
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or 文件：445.59 Kbytes 頁數(shù)：21 Pages | INFINEON 英飛凌 | INFINEON | ||
HIGH AND LOW SIDE DRIVER Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT 文件：264.99 Kbytes 頁數(shù)：14 Pages | IRF | IRF | ||
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS 文件：364.43 Kbytes 頁數(shù)：21 Pages | IRF | IRF | ||
HIGH AND LOW SIDE DRIVER Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT 文件：264.99 Kbytes 頁數(shù)：14 Pages | IRF | IRF | ||
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS 文件：364.43 Kbytes 頁數(shù)：21 Pages | IRF | IRF | ||
HIGH AND LOW SIDE DRIVER Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT 文件：264.99 Kbytes 頁數(shù)：14 Pages | IRF | IRF | ||
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS 文件：364.43 Kbytes 頁數(shù)：21 Pages | IRF | IRF |
產(chǎn)品屬性
- 產(chǎn)品編號：
IR2181
- 制造商：
Infineon Technologies
- 類別：
集成電路（IC） > 柵極驅(qū)動器
- 包裝：
管件
- 驅(qū)動配置：
半橋
- 通道類型：
獨(dú)立式
- 柵極類型：
IGBT，N 溝道 MOSFET
- 電壓 - 供電：
10V ~ 20V
- 邏輯電壓?- VIL，VIH：
0.8V，2.7V
- 電流 - 峰值輸出（灌入，拉出）：
1.9A，2.3A
- 輸入類型：
非反相
- 上升/下降時間（典型值）：
40ns，20ns
- 工作溫度：
-40°C ~ 150°C（TJ）
- 安裝類型：
通孔
- 封裝/外殼：
8-DIP（0.300"，7.62mm）
- 供應(yīng)商器件封裝：
8-PDIP
- 描述：
IC GATE DRVR HALF-BRIDGE 8DIP
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
24+ |
DIP-8 |
150 |
詢價 | |||
IR |
24+ |
原廠封裝 |
2000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
InternationalRectifier |
23+ |
8-DIP |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IR |
18+ |
DIP8 |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價 | ||
IR |
2026+ |
DIP |
12729 |
只做原廠原裝,認(rèn)準(zhǔn)寶芯創(chuàng)配單專家 |
詢價 | ||
IR |
1902+ |
DIP |
2734 |
代理品牌 |
詢價 | ||
Infineon Technologies |
24+ |
8-DIP |
65200 |
一級代理/放心采購 |
詢價 | ||
INFINEON |
25+ |
DIP-8 |
1001 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 |
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