HALF-BRIDGE DRIVER

Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：321.61 Kbytes 頁數(shù)：23 Pages

IRF

Gate drive supply range from 10 to 20V

Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：327.69 Kbytes 頁數(shù)：23 Pages

IRF

HALF-BRIDGE DRIVER

文件：327.69 Kbytes 頁數(shù)：23 Pages

IRF

HALF-BRIDGE DRIVER

文件：329.62 Kbytes 頁數(shù)：23 Pages

INFINEON

英飛凌

600 V半橋柵極驅(qū)動器 IC, 具有擊穿保護

600 V 半橋驅(qū)動器 IC,具有典型的 0.2 A 拉電流和 0.35 A 灌電流，采用 8 引腳 PDIP 封裝，適用于 IGBT 和 MOSFET。也有 8 引腳 SOIC、14 引腳 SOIC 和 14 引腳 PDIP 封裝可選。 ? 專為自舉操作設計的浮動通道\n? 完全運行時的電壓高達 600V\n? 容許負瞬態(tài)電壓高\n? 不受 dV/dt 影響\n? 柵極驅(qū)動供電電壓范圍：10 至 20V\n? 雙通道欠壓鎖定\n? 3.3V、5V 和 15V 邏輯輸入兼容\n? 防止交叉?zhèn)鲗н壿媆n? 雙通道的匹配傳播延遲\n? 高邊輸出與 HIN 輸入同相\n? 低邊輸出與 LIN 輸入不同相\n? 邏輯和電源接地 + /- 5 V 偏移\n? 內(nèi)部死區(qū)時間為 540ns\n? 較低的 di/dt 柵極驅(qū)動器可獲得更好的抗噪聲性\n\n優(yōu)勢:;

Infineon

英飛凌

Package：8-DIP（0.300"，7.62mm）；包裝：散裝 類別：集成電路（IC） 柵極驅(qū)動器 描述：IC GATE DRVR HALF-BRIDGE 8DIP

INFINEON

英飛凌

HALF-BRIDGE DRIVER

Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：321.61 Kbytes 頁數(shù)：23 Pages

IRF

HALF-BRIDGE DRIVER

Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：321.61 Kbytes 頁數(shù)：23 Pages

IRF

Gate drive supply range from 10 to 20V

Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：327.69 Kbytes 頁數(shù)：23 Pages

IRF

HALF-BRIDGE DRIVER

Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：321.61 Kbytes 頁數(shù)：23 Pages

IRF