HIGH AND LOW SIDE DRIVER

Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard

文件：138.73 Kbytes 頁數(shù)：13 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件：144.27 Kbytes 頁數(shù)：14 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件：144.27 Kbytes 頁數(shù)：14 Pages

IRF

600 V high-side and low-side gate driver IC

600 V High and Low Side Driver IC with typical 0.21 A source and 0.36 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. ? Floating channel designed for bootstrap operation\n? Fully operational to +600 V\n? Tolerant to negative transient voltage\n? dV/dt immune\n? Gate drive supply range from 10 to 20 V\n? Undervoltage lockout\n? 3.3 V, 5 V, and 15 V logic input compatible\n? Matched propagation delay for both channel;

Infineon

英飛凌

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：散裝 類別：集成電路（IC） 柵極驅(qū)動器 描述：IC GATE DRVR HALF-BRIDGE 8SOIC

INFINEON

英飛凌

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 柵極驅(qū)動器 描述：IC GATE DRVR HALF-BRIDGE 8SOIC

INFINEON

英飛凌