Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Ultra-fast body diode ? Very high commutation ruggedness ? Extremely low losses due to very low FOM Rdso

文件：4.60565 Mbytes 頁數(shù)：21 Pages

INFINEON

英飛凌

650V N-Channel MOSFET

文件：589.54 Kbytes 頁數(shù)：8 Pages

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美浦森半導(dǎo)體深圳市美浦森半導(dǎo)體有限公司

650V N-Channel MOSFET

文件：589.54 Kbytes 頁數(shù)：8 Pages

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美浦森半導(dǎo)體深圳市美浦森半導(dǎo)體有限公司

11A竊?50V N-CHANNEL MOSFET

文件：461.65 Kbytes 頁數(shù)：6 Pages

KIA

可易亞半導(dǎo)體

N-Channel MOSFET Transistor

? DESCRIPTION ? Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.42? ·Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variation

文件：339.05 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel MOSFET Transistor

? DESCRITION ? Fast Switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤420m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.46 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電