650V CoolMOS ? N溝道汽車SJ功率MOSFET CFD7A

\n優(yōu)勢:\n? Highest reliability in the field meeting automotive lifetime requirements\n? Enabling of higher power density designs\n? Scalable as designed for use in PFC and DC-DC stage\n? Granular portfolio available;

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絲?。?a target="_blank" title="Marking" href="/65a050f7/marking.html">65A050F7；Package：PG-TO247-3；650V CoolMOS? CFD7A SJ Power Device

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MOSFET 650V CoolMOS? CFD7A SJ Power Device

文件：1.44516 Mbytes 頁數(shù)：14 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter

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MOSFET 650V CoolMOS? CFD7A SJ Power Device

文件：1.42958 Mbytes 頁數(shù)：14 Pages

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