isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 950V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.31Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·High peak current

文件：355.72 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

絲?。?a target="_blank" title="Marking" href="/95r310d7/marking.html">95R310D7；Package：PG-TO247-3；MOSFET 950V CoolMOSa PFD7 SJ Power Device

Features ? Integrated ultra-fast body diode ? Best-in-class reverse recovery charge Qrr ? Best-in-class FOM RDS(on) * Eoss, reduced Qg, Ciss, and Coss ? Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V ? Integrated fast body diode ? Best-in-class CoolMOS? quality and relia

文件：1.34609 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

采用 TO-247 封裝的 950 V CoolMOS ? PFD7 超結(jié) MOSFET

\n優(yōu)勢:\n? Best-in-class hard commutation ruggedness enabling usage across topologies\n? Up to 0.5% efficiency gain and up to 4°C lower MOSFET temperature compared to CoolMOS? C3\n? Power density improvement compared to latest CoolMOS? C3 and the closest competitor\n? Improved production yield by ;

Infineon

英飛凌

TSDSON-8

INFINEON

英飛凌

上傳：深圳市毅創(chuàng)輝電子科技有限公司