650V CoolMOS C6 Power Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS? C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件：2.21772 Mbytes 頁(yè)數(shù)：19 Pages

INFINEON

英飛凌

絲印：65C6190；Package：PG-TO247；Extremely low losses due to very low FOM Rdson*Qg and Eoss

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS? C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件：2.21772 Mbytes 頁(yè)數(shù)：19 Pages

INFINEON

英飛凌

N-Channel MOSFET Transistor

? DESCRITION ? Fast Switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤190m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.9 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

500 V-950 V CoolMOS? N 溝道功率 MOSFET

CoolMOS? C6 結(jié)合了英飛凌作為業(yè)內(nèi)先進(jìn)的超結(jié)MOSFET供應(yīng)商的相關(guān)經(jīng)驗(yàn)與其先進(jìn)的創(chuàng)新技術(shù)C6 器件具備了快速開(kāi)關(guān)超結(jié) MOSFET 的所有優(yōu)點(diǎn)，同時(shí)又不犧牲易用性。很低的開(kāi)關(guān)和通態(tài)損耗使開(kāi)關(guān)應(yīng)用更高效，結(jié)構(gòu)緊湊、重量更輕、溫度更低。\n ? 600V CoolMOS? C6 可替代 600V CoolMOS? C3\n? 650V CoolMOS? C6 可替代 650V CoolMOS? C3 ? 易于控制開(kāi)關(guān)行為\n? 由于非常低的品質(zhì)因數(shù)（R DS(ON)*Q g）和E oss），因此損耗極低\n? 非常高的換流堅(jiān)固性\n? 使用簡(jiǎn)便\n? 與 C3 相比，具有更高的輕載效率\n? 出色的可靠性和經(jīng)過(guò)實(shí)踐驗(yàn)證的 CoolMOS? 質(zhì)量以及高密度二極管耐用性\n? 與以前的 CoolMOS? 幾代產(chǎn)品相比，性價(jià)比更高\(yùn)n? 更高效、更緊湊、重量更輕、溫度更低\n\n\n優(yōu)勢(shì):\n?\n ? 提升功率密度\n? 提升可靠性\n? 通用部件可在軟、硬開(kāi)關(guān)拓?fù)渲惺褂肻n? 提高輕載效率\n? 提高在硬開(kāi)關(guān)應(yīng)用中的效率\n? 改進(jìn)了易用性\n? 減輕可能因?yàn)?PCB 布局和封裝寄生效應(yīng)而引;

Infineon

英飛凌