Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Increased MOSFET dv/dt ruggedness ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very hi

文件：3.09063 Mbytes 頁數(shù)：19 Pages

INFINEON

英飛凌

N-Channel MOSFET Transistor

? DESCRITION ? Fast switching ??????? ? FEATURES ? Static drain-source on-resistance: RDS(on)≤280m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.74 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Metal Oxide Semiconductor Field Effect Transistor

文件：2.62743 Mbytes 頁數(shù)：19 Pages

INFINEON

英飛凌

500 V-950 V CoolMOS? N 溝道功率 MOSFET

英飛凌?CoolMOS? P6 超結(jié) MOSFET 系列旨在實(shí)現(xiàn)更高的系統(tǒng)效率，同時(shí)易于在 CoolMOS? P6 中設(shè)計(jì)，填補(bǔ)了專注于提供最佳性能的技術(shù)與更專注于易用性的技術(shù)之間的空白。 ? 減少柵極電荷 (Qg)\n? 更高的 Vth\n? 體二極管耐久性良好\n? 經(jīng)過優(yōu)化的集成 Rg\n? dv/dt 從 50V/ns\n? 提高CoolMOS? 的質(zhì)量得益于英飛凌在超結(jié)技術(shù)領(lǐng)域擁有超過 12 年的制造經(jīng)驗(yàn)\n\n優(yōu)勢:\n? 提高了效率，特別是在輕載條件下\n? 具備提前關(guān)閉功能，可提高軟開關(guān)應(yīng)用效率\n? 適用于硬開關(guān)和軟開關(guān)拓?fù)鋅n? 優(yōu)化了效率與易用性以及對(duì)開關(guān)行為的良好控制性之間的平衡\n? 堅(jiān)固性高，效率更高\(yùn)n? 出色的質(zhì)量和可靠性;

Infineon

英飛凌

Metal Oxide Semiconductor Field Effect Transistor

文件：2.62743 Mbytes 頁數(shù)：19 Pages

INFINEON

英飛凌