英飛凌對諧振高功率拓撲的回答

The 600V CoolMOS? CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS? 7 series. CoolMOS? CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compare ? Ultra-fast body diode\n? Best-in-class reverse recovery charge (Qrr)\n? Improved reverse diode dv/dt and dif/dt ruggedness\n? Lowest FOM RDS(on) x Qg and Eoss\n? Best-in-class RDS(on)/package combinations\n\n優(yōu)勢:\n? Best-in-class hard commutation ruggedness\n? Highest reliability for resonant topol;

Infineon

英飛凌

絲?。?a target="_blank" title="Marking" href="/60r145f7/marking.html">60R145F7；Package：PG-TO247-3；MOSFET 600V CoolMOSa CFD7 Power Transistor

Features ? Ultra-fast body diode ? Low gate charge ? Best-in-class reverse recovery charge (Qrr) ? Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? Best-in-class RDS(on) in SMD and THD packages

文件：1.35106 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET HIGH POWER

INFINEON

英飛凌

600V CoolMOS? CFD7 Power Device

文件：1.11702 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

600V CoolMOS? CFD7 Power Transistor

文件：1.25072 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

600V CoolMOS? CFD7 Power Device

文件：1.02799 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌