絲?。?a target="_blank" title="Marking" href="/60r105f7/marking.html">60R105F7；Package：PG-TO247-3；600V CoolMOSa CFD7 Power Transistor

Features ? Ultra-fast body diode ? Low gate charge ? Best-in-class reverse recovery charge (Qrr) ? Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? Best-in-class RDS(on) in SMD and THD packages

文件：1.16654 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

英飛凌對諧振高功率拓撲的回答

The 600V CoolMOS? CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS? 7 series. CoolMOS? CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compare ? Ultra-fast body diode\n? Best-in-class reverse recovery charge (Qrr)\n? Improved reverse diode dv/dt and dif/dt ruggedness\n? Lowest FOM RDS(on) x Qg and Eoss\n? Best-in-class RDS(on)/package combinations\n\n優(yōu)勢:\n? Best-in-class hard commutation ruggedness\n? Highest reliability for resonant topol;

Infineon

英飛凌

600V CoolMOSa CFD7 Power Transistor

Features ? Ultra-fast body diode ? Low gate charge ? Best-in-class reverse recovery charge (Qrr) ? Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? Best-in-class RDS(on) in SMD and THD packages

文件：1.2577 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

600V CoolMOS??CFD7 Power Transistor

文件：1.045109 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

MOSFET 600V CoolMOSa CFD7 Power Transistor

Features ? Ultra-fast body diode ? Low gate charge ? Best-in-class reverse recovery charge (Qrr) ? Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? Best-in-class RDS(on) in SMD and THD packages

文件：1.68362 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌