絲?。?a target="_blank" title="Marking" href="/60r070f7/marking.html">60R070F7；Package：PG-TO247-3；600V CoolMOS? CFD7 Power Transistor

Features ?Ultra-fastbodydiode ?Lowgatecharge ?Best-in-classreverserecoverycharge(Qrr) ?ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness ?LowestFOMRDS(on)*QgandRDS(on)*Eoss ?Best-in-classRDS(on)inSMDandTHDpackages

文件：1.39023 Mbytes 頁數(shù)：14 Pages

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N-Channel MOSFET Transistor

文件：335.73 Kbytes 頁數(shù)：2 Pages

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英飛凌對諧振高功率拓撲的回答

The 600V CoolMOS? CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS? 7 series. CoolMOS? CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compare ? Ultra-fast body diode\n? Best-in-class reverse recovery charge (Qrr)\n? Improved reverse diode dv/dt and dif/dt ruggedness\n? Lowest FOM RDS(on) x Qg and Eoss\n? Best-in-class RDS(on)/package combinations\n\n優(yōu)勢:\n? Best-in-class hard commutation ruggedness\n? Highest reliability for resonant topol;

Infineon

英飛凌

N-Channel MOSFET Transistor

文件：335.73 Kbytes 頁數(shù)：2 Pages

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600V CoolMOSa CFD7 Power Transistor

Features ? Ultra-fast body diode ? Low gate charge ? Best-in-class reverse recovery charge (Qrr) ? Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? Best-in-class RDS(on) in SMD and THD packages

文件：1.25691 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

isc N-Channel MOSFET Transistor

文件：267.12 Kbytes 頁數(shù)：2 Pages

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