絲印：95R2K0P7；Package：PG-TO251-3；MOSFET 950V CoolMOSa P7 SJ Power Device

Features ? Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss ? Best-in-class IPAK RDS(on) ? Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V ? Integrated Zener Diode ESD protection ? Best-in-class CoolMOS? quality and reliability ? Fully optimized portfolio

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900V-950V CoolMOS? N-Channel Power MOSFET

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS? P7 technology focuses on the low-power SMPS market.\n Offering 50V more blocking voltage than its predecessor 900V CoolMOS? C3, the 950V CoolMOS? P7 series delivers outstanding performance i ? Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss\n? Best-in-class DPAK RDS(on) of 450 mΩ\n? Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V\n? Integrated Zener diode ESD protection up to Class 2 (HBM)\n? Best-in-class quality and reliability\n\n優(yōu)勢(shì):\n? Up to 1% effi;

Infineon

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950V CoolMOS? P7 SJ Power Device

文件：989.29 Kbytes 頁(yè)數(shù)：14 Pages

INFINEON

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950V CoolMOS? P7 SJ Power Device

文件：1.18705 Mbytes 頁(yè)數(shù)：14 Pages

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英飛凌