絲?。?a target="_blank" title="Marking" href="/65r080f7/marking.html">65R080F7；Package：PG-HSOF-8；650V CoolMOSa CFD7 SJ Power Device

Features ? Ultra-fast body diode ? 650V break down voltage ? Best-in-class RDS(on) ? Reduced switching losses ? Low RDS(on) dependency over temperature Benefits ? Excellent hard commutation ruggedness ? Extra safety margin for designs with increased bus voltage ? Enabling increased powe

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The 650 V CoolMOS? CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

\n優(yōu)勢:\n? Excellent hard-commutation ruggedness\n? Extra safety margin for designs with increased bus voltage\n? Enabling increased power density\n? Outstanding light-load efficiency in industrial SMPS applications\n? Improved full-load efficiency in industrial SMPS applications\n? Price competitiven;

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Package：8-PowerSFN；包裝：管件 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：HIGH POWER_NEW

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英飛凌

MOSFET 650V CoolMOSa CFD7 SJ Power Device

Features ? Ultra-fast body diode ? 650V break down voltage ? Best-in-class RDS(on) ? Reduced switching losses ? Low RDS(on) dependency over temperature

文件：1.25216 Mbytes 頁數(shù)：14 Pages

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MOSFET 650V CoolMOSa CFD7A SJ Power Device

Features ? Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? 100% avalanche tested ? Best-in-class RDS(on) in SMD and THD packages Benefits ? Lower switching losses enabling high

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