集成快速體二極管的 650 V CoolMOS ? CFD7 超結(jié) MOSFET 是諧振高功率拓撲的完美選擇

\n優(yōu)勢:\n? Excellent hard-commutation ruggedness\n? Extra safety margin for designs with increased bus voltage\n? Enabling increased power density\n? Outstanding light-load efficiency in industrial SMPS applications\n? Improved full-load efficiency in industrial SMPS applications\n? Price competitiven;

Infineon

英飛凌

絲印：65R040F7；Package：PG-HSOF-8；650V CoolMOSa CFD7 SJ Power Device

Features ? Ultra-fast body diode ? 650V break down voltage ? Best-in-class RDS(on) ? Reduced switching losses ? Low RDS(on) dependency over temperature Benefits ? Excellent hard commutation ruggedness ? Extra safety margin for designs with increased bus voltage ? Enabling increased powe

文件：1.43534 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

Package：8-PowerSFN；包裝：管件 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET N-CH 650V 8HSOF

INFINEON

英飛凌

650V CoolMOSa CFD7 SJ Power Device

Features ? Ultra-fast body diode ? 650V break down voltage ? Best-in-class RDS(on) ? Reduced switching losses ? Low RDS(on) dependency over temperature Benefits ? Excellent hard commutation ruggedness ? Extra safety margin for designs with increased bus voltage ? Enabling increased powe

文件：1.25661 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

MOSFET 650V CoolMOSa CFD7A SJ Power Device

Features ? Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? 100% avalanche tested ? Best-in-class RDS(on) in SMD and THD packages Benefits ? Lower switching losses enabling high

文件：1.41929 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

MOSFET 650V CoolMOSa CFD7A SJ Power Device

Features ? Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? 100% avalanche tested ? Best-in-class RDS(on) in SMD and THD packages Benefits ? Lower switching losses enabling high

文件：1.52921 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌