絲?。?a target="_blank" title="Marking" href="/60s650ce/marking.html">60S650CE；Package：PG-TO251；600V CoolMOS? CE Power Transistor

600V CoolMOSa CE Power Transistor Features ? Extremely low losses due to very low FOM Rdson*Qg and Eos ? Very high commutation ruggedness ? Easy to use/drive ? Pb-free plating, Halogen free mold compound ? Qualified for standard grade applications Applications ? ?PFC stages, hard switching

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INFINEON

英飛凌

500V-900V CoolMOS? N-Channel Power MOSFET

CoolMOS?CE適用于硬開關(guān)應(yīng)用和軟開關(guān)應(yīng)用，作為現(xiàn)代超結(jié)，它可以提供低導(dǎo)通和低開關(guān)損耗，進(jìn)而提高效率并最終降低功耗。 600V、650V 和 700V CoolMOS?CE 結(jié)合了最佳的 RDS （on）和封裝，適用于手機(jī)和平板電腦的低功耗充電器。 ? 典型 R DS （on） 和最大 R DS (on) 之間的邊距較窄\n? 減少了儲存在輸出電容中的能量 (Eoss)\n? 體二極管穩(wěn)健性良好，反向恢復(fù)電荷（Q rr）較低\n? 經(jīng)過優(yōu)化的集成 Rg\n\n優(yōu)勢:\n? 低通態(tài)損耗\n? 低開關(guān)損耗\n? 兼適于硬開關(guān)和軟開關(guān)\n? 易掌控的轉(zhuǎn)換行為\n? 提高效率，進(jìn)而降低功耗\n? 減輕設(shè)計工作量\n? 使用簡便;

Infineon

英飛凌

600V 0.65? N-channel MOSFET

? Description MMD60R650RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI t

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MGCHIP

600V 0.65? N-channel MOSFET

? Description MMD60R650RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI t

文件：755.24 Kbytes 頁數(shù)：11 Pages

MGCHIP

600V 0.65? N-channel MOSFET

? Description MMFA60R650RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI

文件：741.9 Kbytes 頁數(shù)：10 Pages

MGCHIP