600V CoolMOS? CE Power Transistor

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INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/ipak/marking.html">IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

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ISC

無(wú)錫固電

500V-900V CoolMOS? N-Channel Power MOSFET

CoolMOS?CE適用于硬開(kāi)關(guān)應(yīng)用和軟開(kāi)關(guān)應(yīng)用，作為現(xiàn)代超結(jié)，它可以提供低導(dǎo)通和低開(kāi)關(guān)損耗，進(jìn)而提高效率并最終降低功耗。 600V、650V 和 700V CoolMOS?CE 結(jié)合了最佳的 RDS （on）和封裝，適用于手機(jī)和平板電腦的低功耗充電器。 ? 典型 R DS （on） 和最大 R DS (on) 之間的邊距較窄\n? 減少了儲(chǔ)存在輸出電容中的能量 (Eoss)\n? 體二極管穩(wěn)健性良好，反向恢復(fù)電荷（Q rr）較低\n? 經(jīng)過(guò)優(yōu)化的集成 Rg\n\n優(yōu)勢(shì):\n? 低通態(tài)損耗\n? 低開(kāi)關(guān)損耗\n? 兼適于硬開(kāi)關(guān)和軟開(kāi)關(guān)\n? 易掌控的轉(zhuǎn)換行為\n? 提高效率，進(jìn)而降低功耗\n? 減輕設(shè)計(jì)工作量\n? 使用簡(jiǎn)便;

Infineon

英飛凌

600V 0.40? N-channel MOSFET

? Description MMD60R400RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI t

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MGCHIP

600V 0.40? N-channel MOSFET

? Description MMD60R400RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI t

文件：767.02 Kbytes 頁(yè)數(shù)：10 Pages

MGCHIP

600V 0.40? N-channel MOSFET

? Description MMFA60R400RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI

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MGCHIP