650V CoolMOS C6 CFD POWER Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS? CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

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INFINEON

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絲印：65F6190；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS? CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic

文件：3.83053 Mbytes 頁(yè)數(shù)：20 Pages

INFINEON

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N-Channel MOSFET Transistor

? DESCRIPTION ? Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.19? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations f

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ISC

無(wú)錫固電

絲?。?a target="_blank" title="Marking" href="/65r190f7/marking.html">65R190F7；Package：PG-TO220-3；650V CoolMOSa CFD7 SJ Power Device

Features ? Ultra-fast body diode ? 650V break down voltage ? Best-in-class RDS(on) ? Reduced switching losses ? Low RDS(on) dependency over temperature

文件：1.0428 Mbytes 頁(yè)數(shù)：14 Pages

INFINEON

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絲?。?a target="_blank" title="Marking" href="/65a190f7/marking.html">65A190F7；Package：PG-TO220-3；650V CoolMOSa CFD7A SJ Power Device

Features ? Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? 100 avalanche tested ? Best-in-class RDS(on) in SMD and THD packages

文件：1.73828 Mbytes 頁(yè)數(shù)：14 Pages

INFINEON

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Metal Oxide Semiconductor Field Effect Transistor

文件：2.19785 Mbytes 頁(yè)數(shù)：16 Pages

INFINEON

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500 V-950 V CoolMOS? N 溝道功率 MOSFET

Replacement for 650V CoolMOS? CFD2?is 600V CoolMOS? CFD7\n 650V CoolMOS? CFD2 is Infineon's second generation of market leading high voltage CoolMOS? MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation ? 650V technology with integrated fast body diode\n? Limited voltage overshoot during hard commutation\n? Significant Qg reduction compared to 600V CFD technology\n? Tighter RDS(on) max to RDS(on) typ window\n? Easy to design-in\n? Lower price compared to 600V CFD technology\n\n優(yōu)勢(shì):\n? Low switching ;

Infineon

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650V CoolMOS? N 溝道汽車級(jí)SJ 功率 MOSFET CFD7A

\n優(yōu)勢(shì):\n? 在滿足汽車壽命要求方面具有行業(yè)最高可靠性\n? 實(shí)現(xiàn)更高功率密度設(shè)計(jì)\n? 可擴(kuò)展設(shè)計(jì)用于 PFC 和 DC-DC 級(jí)\n? 提供豐富的產(chǎn)品組合;

Infineon

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20V-650V汽車級(jí)MOSFET

650V CoolMOS? CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS? power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS? CFDA series provide ? First 650V automotive qualified technology with integrated fast body diode on the market\n? Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n? Low gate charge value Q g\n? Low Q rr at repetitive commutation on body diode & low Q oss\n? Reduced turn on and turn of ;

Infineon

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