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          首頁 >IPI65R150CFD>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IPI65R150CFD

          絲?。?a target="_blank" title="Marking" href="/65f6150/marking.html">65F6150;Package:PG-TO262;Metal Oxide Semiconductor Field Effect Transistor

          Description CoolMOS? is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS?M CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Th

          文件:3.82385 Mbytes 頁數:20 Pages

          INFINEON

          英飛凌

          IPI65R150CFD

          isc N-Channel MOSFET Transistor

          文件:331 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          IPI65R150CFD

          500V-900V CoolMOS? N-Channel Power MOSFET

          650V CoolMOS? CFD2 is Infineon's second generation of market leading high voltage CoolMOS? MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a c ·650V technology with integrated fast body diode\n ·Limited voltage overshoot during hard commutation\n ·Significant Q g reduction compared to 600V CFD technology\n ·Tighter R DS(ON) max to R DS(on) typ window\n ·Easy to design-in\n ·Lower price compared to 600V CFD technology;

          Infineon

          英飛凌

          IPP65R150CFD

          Metal Oxide Semiconductor Field Effect Transistor

          Description CoolMOS? is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS?M CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Th

          文件:3.82385 Mbytes 頁數:20 Pages

          INFINEON

          英飛凌

          IPP65R150CFD

          N-Channel MOSFET Transistor

          文件:338.54 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          IPP65R150CFDA

          Metal Oxide Semiconductor Field Effect Transistor

          文件:2.19525 Mbytes 頁數:16 Pages

          INFINEON

          英飛凌

          技術參數

          • Package?:

            I2PAK (TO-262)

          • VDS?max:

            650.0V

          • RDS (on)?max:

            150.0m?

          • Polarity?:

            N

          • ID ?max:

            22.4A

          • Ptot?max:

            195.3W

          • IDpuls?max:

            72.0A

          • VGS(th)?min?max:

            3.5V?4.5V

          • QG?:

            86.0nC?

          • Rth?:

            0.64K/W?

          • RthJC?max:

            0.64K/W

          • RthJA?max:

            62.0K/W

          • Operating Temperature?min:

            -55.0°C?

          供應商型號品牌批號封裝庫存備注價格
          ZETEX
          23+
          SOT-23
          69820
          終端可以免費供樣,支持BOM配單!
          詢價
          INFINEON
          22+
          TO-262
          8000
          終端可免費供樣,支持BOM配單
          詢價
          INFINEON/英飛凌
          23+
          TO-262
          89630
          當天發(fā)貨全新原裝現貨
          詢價
          INFINEON
          23+
          TO-262
          8000
          專注配單,只做原裝進口現貨
          詢價
          INFINEON
          23+
          TO-262
          7000
          詢價
          INFINEON/英飛凌
          22+
          I2PAK(TO-262)
          92903
          詢價
          INFINEON/英飛凌
          24+
          TO-262
          47186
          鄭重承諾只做原裝進口現貨
          詢價
          Infineon
          1931+
          N/A
          493
          加我qq或微信,了解更多詳細信息,體驗一站式購物
          詢價
          INFINEON
          25+
          TO262-3
          1675
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          Infineon
          22+
          NA
          493
          加我QQ或微信咨詢更多詳細信息,
          詢價
          更多IPI65R150CFD供應商 更新時間2026-1-20 13:44:00
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