CoolMOS Power Transistor

Features ? Lowest figure-of-merit Ron x Qg ? Ultra low gate charge ? Extreme dv/dt rated ? High peak current capability ? Qualified for industrial grade applications according to JEDEC1) ? Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: ? Hard s

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INFINEON

英飛凌

isc N-Channel MOSFET Transistor

? DESCRIPTION ? Ultra low gate charge ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.52? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：331.22 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

500V-900V CoolMOS? N-Channel Power MOSFET

CoolMOS? CP, Infineon's fifth series of CoolMOS?, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. ·Lowest figure of merit R on x Q g\n ·Ultra low gate charge\n ·Extreme dv/dt rate\n ·Ultra low R DS(on), ultra low gate charge, very fast switching\n ·V th 3 V, g fs very high, internal R g very low\n ·High current capability\n ·Significant reduction of conduction and switching losses\n ·High;

Infineon

英飛凌

N-Channel MOSFET Transistor

? DESCRIPTION ? Ultra low gate charge ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.52? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.74 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

CoolMOS Power Transistor

Features ? Lowest figure-of-merit Ron x Qg ? Ultra low gate charge ? Extreme dv/dt rated ? High peak current capability ? Qualified for industrial grade applications according to JEDEC1) ? Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: ? Hard s

文件：558.27 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌